Center for Advanced Materials Discovery towards 3D Display

Established in 2016, the Center for Advanced Materials Discovery towards 3D Display aims to develop novel materials and processing technologies for next-generation displays and semiconductor applications. The center led the nationally funded Creative Materials Discovery Program, which focused on pioneering light-induced, non-equilibrium synthesis to develop key materials such as quantum dots, high-mobility channel semiconductors, low-defect insulators, and corrosion-resistant electrodes. These materials enabled significant improvements in high-resolution, energy-efficient display devices.
Building on these achievements, the center initiated a collaborative project with Hansol Iones, expanding the light-matter interaction platform to dry, non-contact cleaning processes for semiconductor equipment using Intense Pulsed Light (IPL). This extended the center’s core capabilities from material discovery to practical industrial process innovation.

Target Research Areas

• Light-induced synthesis of non-equilibrium phases for display and semiconductor materials
• IPL/laser-material interaction for scalable material processing and surface treatment
• Surface analysis and real-time diagnostics using spectroscopy (e.g., Raman, XPS)
• Integration of light-synthesized materials into high-performance devices
• Application of photon-based processing to 3D-structured semiconductor components

Research Theme

• Photon-driven synthesis and processing for display and semiconductor innovation

  This research theme explores light-based synthesis techniques as a powerful alternative to conventional thermal processes for fabricating next-generation display materials. By utilizing excimer lasers and intense pulsed light (IPL), the center enables ultrafast, localized, and non-equilibrium synthesis of high-performance materials such as quantum dots, 2D semiconductors, hybrid dielectrics, and transparent electrodes.
  These materials are optimized for high-resolution, energy-efficient, and flexible displays, with properties engineered beyond what equilibrium processes can achieve. Multiscale simulations and in situ characterization are employed to analyze and control photon–material interactions, allowing for the discovery of metastable phases and precise tailoring of functional properties at the atomic level.

• Light-Assisted Surface Engineering and Cleaning for Semiconductor Processes

  Building on the photon-based synthesis capabilities, this theme expands into practical semiconductor surface treatment technologies. Leveraging the high-energy density and broad-area coverage of IPL, the center develops dry, chemical-free cleaning methods for 3D-structured semiconductor equipment parts, such as chamber interiors and etched surfaces.
  In collaboration with industry, the center applies Raman and XPS-based surface diagnostics to optimize cleaning efficiency, residue removal, and process uniformity. The goal is to replace conventional wet or plasma cleaning steps with scalable, compact, and high-throughput optical cleaning modules, potentially integrable with robotic systems for fully automated in-line cleaning in advanced semiconductor fabs.

Research Topics

• Quantum dot synthesis with >47% PLQY using excimer and IPL techniques
• Laser-induced crystallization and low-temperature fabrication of 2D semiconductors (e.g., MoS₂, Bi₂O₂Se)
• Patternable, high-resolution QD films with enhanced light extraction efficiency
• Development of ultra-low-resistance, chemically stable electrode materials (e.g., Ag/Au core-shell nanowires)
• Dry cleaning of semiconductor chamber components using IPL and spectroscopy-guided optimization
• Compact IPL module design for robotic integration in semiconductor fabs
• Multiscale simulation of laser-material interactions to guide synthesis pathways